Si is adsorbed at H3 position of SiC(00001) surface at low coverage.
Si adsorption energy is 7.1 eV, 6.7 eV and 5.0 eV for clean and below and above 0.25 ML Si coverage.
For Si coverage above 0.4 ML adsorption energy is 4.0 eV for both H3 and on-top positions.
Si pressure for Lely process corresponds to 0.3 ML Si coverage.