Size dependence of structural and optical properties in ZnS:Ni films was studied.
The XRD patterns exhibited that the thin films consist of small nanocrystals.
The band gap energy of ZnS:Ni thin films ranged from 3.74 to 3.63 eV.
The intensity of the PL emission is depended upon the deposition temperature.
The relative dielectric constant of the ZnS:Ni films was determined to be 6.5.