Estimates of EEPROM Device Lifetime

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• 作者：Leilei Li^a ; ^b ; 李 ; &#x857e ; &#x857e ; Zongguang Yu^a ; ^b ; ^{yuzg@cetc58.com} ; 于 ; 宗 ; 光 ; Yue Hao^a ; 郝 ; &#x8dc3
• 关键词：electrically erasable programmable read-only memory (EEPROM) ; time dependent dielectric breakdown (TDDB) ; breakdown charge
• 刊名：Tsinghua Science Technology
• 出版年：2011
• 出版时间：April 2011
• 年：2011
• 卷：16
• 期：2
• 页码：170-174
• 全文大小：366 K

文摘

A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, Q_BD, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, Q_BD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, ΔQ_FG, is measured, the lower limit of the EEPROM life can be related to Q_BD/ΔQ_FG. The method is reached by erase/write cycle tests on an EEPROM.