Growth of aluminum oxide thin films with enhanced film density by the integration of in situ flash annealing into low-temperature atomic layer deposition

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• 作者：Thomas Henke^a ; ^b ; ^{Thomas.Henke@tu-dresden.de} ; Martin Knaut^a ; ^b ; Christoph Hossbach^a ; Marion Geidel^a ; ^b ; Matthias Albert^a ; Johann W. Bartha^a ; ^b
• 关键词：Aluminum oxide (Al2O3) ; Atomic layer deposition (ALD) ; Low-temperature deposition ; Flash lamp annealing (FLA) ; Enhanced film density ; Enhanced film growth
• 刊名：Surface and Coatings Technology
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：309
• 期：Complete
• 页码：600-608
• 全文大小：1572 K
• 卷排序：309

文摘

Millisecond flash annealing was integrated into a low-temperature ALD process. The density of Al2O3 ALD films grown at 75 °C was increased by around 10%. In situ FLA results in an enhanced film growth with 25% larger mass gain per cycle. Film composition, refractive index and dielectric constant were improved as well. The same densities were not achieved by rapid thermal annealing up to 600 °C.