Growth and characterization of β-Ga₂O₃ crystals

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• 作者：V.I. Nikolaev^a ; ^b ; ^c ; V. Maslov^c ; S.I. Stepanov^b ; ^d ; ^{s.i.stepanov@googlemail.com} ; A.I. Pechnikov^a ; ^b ; V. Krymov^b ; ^c ; I.P. Nikitina^c ; L.I. Guzilova^b ; ^c ; V.E. Bougrov^b ; A.E. Romanov^b ; ^c
• 关键词：A2. Growth from vapour ; A3. Physical vapour deposition processes ; B1. Gallium compounds ; B1. Oxides ; B2. Semiconducting gallium compounds ; B2. Wide bandgap semiconductors
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：132-136
• 全文大小：1013 K
• 卷排序：457

文摘

β-Ga2O3 crystals were produced by free crystallization of a melt in Al2O3 crucible. Elastic and mechanical properties of β-Ga2O3 were measured. β-Ga2O3 layers were grown by sublimation method on Si and Al2O3 substrates. Substrate material and orientation define the properties of β-Ga2O3 layers.