Direct imaging of dopant distributions across the Si-metallization interfaces in solar cells: Correlative nano-analytics by electron microscopy and NanoSIMS

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• 作者：Praveen Kumar^a ; ^{praveen.kumar@uni-tuebingen.de} ; Michael Pfeffer^a ; Benjamin Willsch^a ; Oliver Eibl^a ; Lluí ; s Yedra^b ; Santhana Eswara^b ; Jean-Nicolas Audinot^b ; Tom Wirtz^b
• 关键词：Monocrystalline Si solar cells ; Dopants ; NanoSIMS ; Microstructure ; Contact resistance ; Structure-property relationship
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：160
• 期：Complete
• 页码：398-409
• 全文大小：2724 K
• 卷排序：160

文摘

Direct imaging of dopant (P, B) distributions across the Si-metallization interface. Dopant distributions by NanoSIMS with a high-lateral resolution (100 nm) and high-sensitivity. P emitter structure was found to be well-preserved in the optimally fired cells. The diffusion barrier layer (SiNX) was completely disintegrated in the overfired cell. Overfired cell showed a high contact resistance and the formation of B-O defect complexes.