Ordered stacking faults within nanosized silicon precipitates in aluminum alloy

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• 作者：Dong Yue Xie^a ; Jiawei Yan^a ; Yangxin Li^a ; ^b ; ^{astatium@sjtu.edu.cn} ; Dong Qiu^c ; Guilin Wu^d ; Xiaodong Wang^a ; Bin Chen^a ; Yao Shen^a ; ^{yaoshen@sjtu.edu.cn} ; Guo-zhen Zhu^a
• 关键词：Aluminum alloys ; Precipitation ; Ordered stacking faults ; Interfaces ; Electron microscopy
• 刊名：Materials Letters
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：190
• 期：Complete
• 页码：225-228
• 全文大小：2191 K
• 卷排序：190

文摘

Al-Si alloy with nanosized Si precipitates is prepared by electropulsing treatment. Si particles with a truncated tetrahedral morphology is systemically investigated. An unusual 9R ordered stacking faults are observed within these Si particles. An atomistic model is proposed to rationalize the existence of the 9R structure.