Temperature dependence of current–voltage characteristics of Sn/p-GaTe Schottky diodes

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• 作者：Coskun ; Cevdet ; Biber ; Mehmet ; Efeoglu ; Hasan
• 关键词：GaTe ; Schottky barrier ; Gaussian distribution ; I&ndash ; V&ndash ; T
• 刊名：Applied Surface Science
• 出版年：2003
• 出版时间：April 30, 2003
• 年：2003
• 卷：211
• 期：1-4
• 页码：360-366
• 全文大小：161 K

文摘

The forward current–voltage (I–V) characteristics of Sn Schottky contacts on a Bridgman–Stockbarger grown p-GaTe layered semiconducting material have been measured over the temperature range of 80–300K. Their analysis based on the thermionic emission (TE) mechanism has revealed an abnormal decrease of zero-bias barrier height and increase of ideality factor at lower temperatures. This behavior has been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. A Φ_b0 versus 1/T plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights, and values Φ¯_b0(T=0)=0.89eV and σ₀