Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

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• 作者：Makoto Miyoshi^a ; ^b ; ^{miyoshi.makoto@nitech.ac.jp} ; Tatsuya Tsutsumi^a ; Tomoki Kabata^a ; Takuma Mori^a ; Takashi Egawa^a ; ^b
• 关键词：MQW ; multiple quantum well ; EQE ; external quantum efficiency ; ECE ; energy conversion efficiency ; PL ; photoluminescence ; NRC ; nonradiation recombination center
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：29-34
• 全文大小：1242 K
• 卷排序：129

文摘

Effect of well thickness on InGaN/GaN MQW solar cell performance was studied. EQE and ECE showed the highest values at a specific well thickness. PL study indicated the generation of NRCs around a critical well thickness. The critical well thickness seemed to be considerably affected by growth conditions.