Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

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• 作者：Cam Phu Thi Nguyen ; Jayapal Raja ; Sunbo Kim ; Kyungsoo Jang ; Anh Huy Tuan Le ; Youn-Jung Lee ; Junsin Yi ; ^{junsin@skku.edu}
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：1472-1477
• 全文大小：1500 K
• 卷排序：396

文摘

The characteristics of thin film transistors using double active layers are examined. Electrical characteristics have been improved for the double active layers devices. The total trap density can be decreased by insert-ion of ultrathin ITO film.