Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO_x capping layer by sputtering and post-annealing

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• 作者：Shyh-Jer Huang^a ; Cheng-Wei Chou^a ; ^{j2222222229@gmail.com} ; Yan-Kuin Su^a ; ^{yksu@mail.ncku.edu.tw} ; Jyun-Hao Lin^a ; Hsin-Chieh Yu^a ; De-Long Chen^a ; Jian-Long Ruan^b
• 关键词：HEMTs ; Gallium nitride ; Enhancement mode ; Sputter ; p-NiOx
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 April 2017
• 年：2017
• 卷：401
• 期：Complete
• 页码：373-377
• 全文大小：2006 K
• 卷排序：401

文摘

A technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiOx capping layer. The Vth shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 107. The reverse gate leakage current is 10−9 A/mm, and the off-state drain-leakage current is 10−8 A/mm. The Vth hysteresis is extremely small at about 33 mV.