Understanding the overall shape of the output characteristics from the change in the channel potential profile for nanowire FET

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• 作者：Niladri Sarkar ^{niladri@pilani.bits-pilani.ac.in}
• 关键词：Ballistic transport ; Self-consistent NEGF procedure ; Electrostatic capacitance ; Channel potential profile ; Linear and saturation regimes
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：191-199
• 全文大小：1274 K
• 卷排序：101

文摘

NEGF methodology has been used to study the electrostatics of the channel of a nanowire FET. The device is a coaxially gated nanowire FET. This work presents a good understanding of the physics of these devices and the choices of the correct dielectric materials. The change in the saturation current is corroborated with the change in the channel potential profile. Lower value of dielectric constant for the oxide layer significantly changes the potential profile inside the channel.