Fabrication of Si/ZnO vertical n-n+ and p-p+ isotype junction devices by pulsed laser deposition
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- 作者：Saeed Esmaili Sardari ; saeedesmaili@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; Andrew Berkovich ; Agis A. Iliadis
- 关键词：Zinc oxide ; Widegap semiconductors ; Vertical transport ; Junction devices ; Silicon ; Pulse laser deposition
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：30 November 2015
- 年：2015
- 卷：595
- 期：part_PA
- 页码：181-185
- 全文大小：697 K
文摘
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Device development and electrical characterization of ZnO thin films are presented.
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Rectifying properties are observed for n and p-type Si/ZnO devices.
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Forward bias currents have quadratic IV properties showing SCLC transport mechanism.
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Low O2 increases electron concentration of ZnO and forms an n-Si/n+ ZnO isotype junction.
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High O2 growth results in the formation of a p-Si/p+ ZnO isotype junction.
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