A mild acid etching treatment on VO2 films was performance to adjust the surface state of the VO2 particles, while leaving the phase composition, crystallinity, grain size, and stoichiometry unchanged.
Acid etching affects only the IMT (insulator–metal transition) characteristics of films, but keeps MIT properties almost constant.
These results directly correlate the nucleation of metal-phase VO2 with surface-localized defects, suggesting a potential particle surface engineering to independently regulate MIT and IMT.