Low temperature processed ZnO thin film as electron transport layer for efficient perovskite solar cells
详细信息 查看全文
- 作者：Md Arafat Mahmud ; Naveen Kumar Elumalai ; n.elumalai@unsw.edu.au" class="auth_mail" title="E-mail the corresponding author ; Mushfika Baishakhi Upama ; Dian Wang ; Kah Howe Chan ; Matthew Wright ; Cheng Xu ; Faiazul Haque ; Ashraf Uddin ; a.uddin@unsw.edu.au" class="auth_mail" title="E-mail the corresponding author
- 关键词：ZnO thin film ; Low temperature ; Deep trap states ; Electronic properties ; Mott-Schottky analysis ; Charge transport
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：251-264
- 全文大小：4989 K
文摘
- •
Low temperature processed (<150 °C) sol-gel ZnO is employed as ETL in PSCs.
- •
Double layered ZnO ETL with 45 nm thickness is found to be the optimum value.
- •
ZnO ETL (45 nm) results in less trap states and reduced recombination.
- •
Devices with optimized ZnO ETL exhibits superior charge transport properties.