用户名: 密码: 验证码:
Affect of the graphene layers on the melting temperature of silicon by molecular dynamics simulations
详细信息    查看全文
文摘
titem" id="list_l0005">t class="label">•t>

Interaction of C–Si pairs has caused decreasing of the energy of the silicon part in the graphene/silicon/graphene (GSG) sandwiches.

t class="label">•t>

C–Si interaction prevents the melting of the two silicon surfaces adjoining the graphene layers in the GSG sandwiches.

t class="label">•t>

The melting temperature of the silicon part in the GSG sandwiches (Tm = 2450 K) is 1.6 times higher than that of the only silicon system (Tm,pure = 1540 K).

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700