Existence and uniqueness for a two-temperature energy-transport model for semiconductors

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• 作者：G. Alì ; ^a ; ^b ; ^{giuseppe.ali@unical.it} ; V. Romano^c ; ^{romano@dmi.unict.it}
• 关键词：Energy-transport models ; Semiconductors ; Existence and uniqueness
• 刊名：Journal of Mathematical Analysis and Applications
• 出版年：2017
• 出版时间：15 May 2017
• 年：2017
• 卷：449
• 期：2
• 页码：1248-1264
• 全文大小：360 K
• 卷排序：449

文摘

An existence and uniqueness result for a two-temperature energy-transport model is proved, in the one-dimensional steady-state case, considering a bounded domain and physically appropriate boundary conditions. The model arises in the description of heat effects in semiconductors, the two temperatures account for the electron and the lattice temperature.