文摘
In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (¦Óeff) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (¦Óeff) from 3.11 ¦Ìs to 134.74 ¦Ìs and the surface recombination velocity (Seff) have decreased from 8441 cm s?1 to 195 cm s?1. The reflectivity spectra of obtained films, performed in the 300-1200 nm wavelength range, show an important decrease of the average reflectivity from 40 % to 5 % . We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.