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Cation substitution induced structural transition, band gap engineering and grain growth of Cu2CdxZn1−xSnS4 thin films
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文摘
Cu2CdxZn1−xSnS4 (CCZTS) thin films have been prepared by direct liquid coating (DLC) technique. XRD and Raman demonstrate the structural transition from kesterite to stannite with increasing Cd content. The incorporation of Cd in Cu2ZnSnS4 (CZTS) contributes to formation of notable large grains. The band gap energy of CCZTS thin films can be tuned almost linearly between 1.35 and 1.15 eV varying with Cd compositions.

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