Computer simulation of the sheath and the adjacent plasma in the presence of a plasma source

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• 作者：E.G. Shustin^a ; ^c ; ^{shustin@ms.ire.rssi.ru} ; V.P. Tarakanov^b ; ^c ; K. Ronald^d
• 关键词：Low temperature plasma ; Computer simulation ; Plasma sheath ; Energy distribution
• 刊名：Vacuum
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：135
• 期：Complete
• 页码：1-6
• 全文大小：893 K
• 卷排序：135

文摘

We performed modeling of the structure of a plasma layer near a wall in the presence of a plasma source. Specially developed model, imitating beam excited plasma, was applied for PiC simulation. Interaction of plasma with a wall causes cooling of electrons and corresponding decrease of floating potential.