White light generation from HfO₂ films co-doped with Eu³⁺+ Tb³⁺ ions synthesized by pulsed laser ablation technique

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• 作者：A. Aguilar-Castillo^a ; J.R. Aguilar-Herná ; ndez^a ; M. Garcí ; a-Hipó ; lito^b ; ; S. Ló ; pez-Romero^b ; R.K. Swarnkar^c ; A. Bá ; ez-Rodrí ; guez^b ; R.J. Fragoso-Soriano^d ; C. Falcony^d
• 关键词：White luminescence ; HfO2 ; Eu3++ Tb3+ ; Thin films ; Pulsed laser ablation ; High transparency ; Low roughness
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：355-362
• 全文大小：1439 K

文摘

In this work we investigate the luminescent properties of HfO₂ films doped with Eu³⁺, Tb³⁺ and Eu³⁺+ Tb³⁺ ions excited through photoluminescence and cathodoluminescence. These films were synthesized by the pulsed laser ablation technique and structurally studied by X-ray diffraction and Raman spectroscopy; the surface morphology was observed by scanning electron and atomic force microscopies. The optical transmittance was measured as well. The crystalline phase observed was the monoclinic of the HfO₂. The surface morphology of the films exhibited a low roughness, as measured by atomic force microscopy. These films show a high transparency in the visible region. The emission spectra show bands centered at 598, 614 (strongest emission), and 631 nm for the HfO₂:Eu³⁺ films under excitation of 267 nm. HfO₂:Tb³⁺ films when excited at 277 nm exhibit emission bands centered at 491, 543 (dominant emission), 551 and 586 nm. In the case of co-doping with Eu³⁺ and Tb³⁺ ions white emission was observed under excitation with 320 nm, as indicated by the CIE chromaticity diagram.