Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

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• 作者：Wenyuan Liu^a ; Mahasin Alam Sk^b ; Sergei Manzhos^b ; ^{mpemanzh@nus.edu.sg} ; Ignacio Martin-Bragado^c ; ^{imartinbragado@gmail.com} ; Francis Benistant^d ; Siew Ann Cheong^a
• 关键词：Dopant diffusion ; Density functional theory ; Kinetic Monte Carlo
• 刊名：Acta Materialia
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：125
• 期：Complete
• 页码：455-464
• 全文大小：4036 K
• 卷排序：125

文摘

A roadblock in utilizing InGaAs for scaled-down electronic devices is its anomalous dopant diffusion behavior; specifically, existing models are not able to explain available experimental data on beryllium diffusion consistently. In this paper, we propose a more comprehensive model, taking self-interstitial migration and Be interaction with Ga and In into account. Density functional theory (DFT) calculations are first used to calculate the energy parameters and charge states of possible diffusion mechanisms. Based on the DFT results, continuum modeling and kinetic Monte Carlo simulations are then performed. The model is able to reproduce experimental Be concentration profiles. Our results suggest that the Frank-Turnbull mechanism is not likely, instead, kick-out reactions are the dominant mechanism. Due to a large reaction energy difference, the Ga interstitial and the In interstitial play different roles in the kick-out reactions, contrary to what is usually assumed. The DFT calculations also suggest that the influence of As on Be diffusion may not be negligible.