Epitaxial Ge₂Sb₂Te₅ films on Si(111) prepared by pulsed laser deposition

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• 作者：I. Hilmi^a ; ^{isomi.hilmi@iom-leipzig.de} ; E. Thelander^a ; P. Schumacher^a ; J.W. Gerlach^a ; B. Rauschenbach^a ; ^b
• 关键词：Phase change materials ; Ge2Sb2Te5 ; Epitaxial growth ; Pulsed laser deposition ; XRD ; In-plane pole figures
• 刊名：Thin Solid Films
• 出版年：2016
• 出版时间：30 November 2016
• 年：2016
• 卷：619
• 期：Complete
• 页码：81-85
• 全文大小：1085 K
• 卷排序：619

文摘

Epitaxial GST thin films were grown on Si(111) using pulsed laser deposition. The films possess a hexagonal structure with a GST(0001) out-of-plane orientation. The deposition window for epitaxial growth ranges from 110° to 300 °C. Epitaxial GST films could be synthesized with deposition rates up to 42 nm/min.