Formation of lateral nanowires by Ge deposition on Si(111) at high temperatures
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- 作者：A.А. Shklyaeva ; b ; ; А.V. Latysheva ; b
- 关键词：A1. Interfaces ; A1. Segregation ; A1. Surface processes ; A3. Molecular beam epitaxy ; B1. Germanium silicon alloys
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 May 2016
- 年：2016
- 卷：441
- 期：Complete
- 页码：84-88
- 全文大小：2741 K
文摘
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SiGe lateral nanowires (NWs) are grown by Ge deposition on Si(111) at 830–860 °С.
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NW shapes are straight or winding.
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NWs do not connect each other in order to form enclosed areas.
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It is suggested that NW formation takes place to avoid the introduction of misfit dislocations.