Power factor investigation of RF magnetron sputtered c-GeSbTe thin film
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- 作者：Athorn Vora&ndash ; uda ; b ; Mati Horprathumc ; Pitak Eiamchaic ; Pennapa Muthitamongkold ; Chanchana Thanachayanontd ; Weerasak Somkhunthote ; Tosawat Seetawana ; b ; t_seetawan@snru.ac.th" class="auth_mail" title="E-mail the corresponding author
- 关键词：Amorphous ; Chalcogenides ; Magnetron sputtering ; Thin films ; Thermoelectric properties ; Electrical properties
- 刊名：Surface and Coatings Technology
- 出版年：2016
- 出版时间：15 April 2016
- 年：2016
- 卷：291
- 期：Complete
- 页码：15-20
- 全文大小：2215 K
文摘
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Germanium antimony tellurium (GeSbTe) thin film has been deposited by the RF magnetron sputtering using initial material target atomic ratio of 1:1:1.
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GeSbTe thin film deposited by the RF magnetron sputtering, annealed at 473 K up to 623 K shows highest mobility and power factor, and lowest resistivity for 523 K.
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The as-deposited thin film shows amorphous phase and changed to cubic structure (c–GeSbTe) after annealing treatments.
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The c–GeSbTe thin film annealed at 523 K shows highest mobility, lowest electrical resistivity, and highest power factor.