Superlattice-like GeTe/Sb thin film for ultra-high speed phase change memory applications

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• 作者：Yifeng Hu^a ; ^{hyf@jsut.edu.cn} ; Haipeng You^a ; Xiaoqin Zhu^a ; ^{pcram@jsut.edu.cn} ; Hua Zou^a ; Jianhao Zhang^a ; Sannian Song^b ; Zhitang Song^b
• 关键词：GeTe/Sb thin film ; Ultra-high speed ; Phase change memory
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：141-144
• 全文大小：833 K
• 卷排序：457

文摘

Superlattice-like GeTe/Sb thin film was investigated for its potential application in phase change memory. Compared with GeTe material, lower energy barrier for crystallization is realized for GeTe/Sb thin film. In crystallization process, less internal induced stress exists in GeTe/Sb thin film than GeTe. A fast operation speed of 8 ns and a good endurance of 6.3 × 106 cycles were realized for GeTe/Sb thin film. The superlattice-like GeTe/Sb thin film is a promising candidate for high speed and low power phase change memory application.