Fluorescence dynamics and energy migration in Er³⁺-doped SRSO structure

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• 作者：Antoine Al Choueiry ; Anne-Marie Jurdyc ; Bernard Jacquier ; Fabrice Gourbilleau ; Richard Rizk
• 关键词：Silicon rich silicon oxide multilayers ; Erbium decay time ; Energy migration ; Diffusion-limited model
• 刊名：Materials Science and Engineering: B
• 出版年：2008
• 出版时间：15 January 2008
• 年：2008
• 卷：146
• 期：1-3
• 页码：157-159
• 全文大小：408 K

文摘

Decay time properties of erbium ions in silicon rich silicon oxide multilayers are reported. A non-exponential time behaviour for the ⁴I_13/2 decay profile is observed and is interpreted in a diffusion-limited model. Furthermore, an appreciable increase of the lifetime of the ⁴I_13/2 is observed when the sample temperature is lower than 50 K. The lifetime dependence of the ⁴I_13/2 as a function of temperature was successfully fitted with a model taking into account the temperature dependence of the energy migration between Er³⁺ ions in the presence of quenching impurities.