Structural, optical and electrical properties of AlSb thin films deposited by pulsed laser deposition using aluminum-antimony alloying target

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• 作者：Ke Yang ; Bing Li ; ^{libing70@126.com} ; Jingquan Zhang ; Wei Li ; Lili Wu ; Guanggen Zeng ; Wenwu Wang ; Cai Liu ; Lianghuan Feng
• 关键词：AlSb films ; Pulsed laser deposition ; Aluminum-antimony alloying target ; Semiconductors
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：1-6
• 全文大小：1218 K
• 卷排序：102

文摘

PLD technique and aluminum-antimony alloying target were utilized. Polycrystalline AlSb films were prepared at different substrate temperature. Intensity of diffraction peak of AlSb film deposited at 200 °C was stronger. The energy gap of AlSb films is 1.63 eV, close to the theoretical value of 1.62 eV.