Double light emitting diodes were fabricated by introducing an In_0.17Al_0.83N interlayer in n-ZnO/p-GaN heterojunction.

The reverse leakage current was reduced by introducing the In_0.17Al_0.83N interlayer.

The electroluminescence spectra of the n-ZnO/In_0.17Al_0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases.