Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates

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• 作者：Yadira Arroyo Rojas Dasilva^a ; ^{Yadira.Arroyo@empa.ch" class="auth_mail" title="E-mail the corresponding author} ; Marta D. Rossell^a ; Fabio Isa^a ; ^b ; Rolf Erni^a ; Giovanni Isella^c ; Hans von Kä ; nel^a ; ^b ; Pierangelo Gr&ouml ; ning^d
• 关键词：Dislocations ; Stacking Faults ; Twins ; HAADF-STEM ; Ge
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：127
• 期：Complete
• 页码：169-172
• 全文大小：1412 K

文摘

In this paper we report on the defects formed in Ge crystals grown on Si(001) pillars upon strain relaxation. The analysis is performed by high-angle annular dark-field scanning transmission electron microscopy. The strain relaxation happens by means of 60° and 90° misfit dislocations with Burgers vectors grey_pxl.gif" data-inlimgeid="1-s2.0-S1359646216304213-si1.gif">$\overrightarrow{b}=\frac{1}{2}⟨110⟩$. Misfit dislocations may split forming partial dislocations with Burgers vectors grey_pxl.gif" data-inlimgeid="1-s2.0-S1359646216304213-si2.gif">$\overrightarrow{b}=\frac{1}{6}⟨112⟩$, and are separated by a stacking fault. Besides, intrinsic stacking faults in different {111} planes interact and annihilate each other forming stair rod dislocations. Coherent and incoherent twin boundaries of the Σ3{111} and Σ3{112} types are also found in the Ge.