Investigation and process optimization of SONOS cell’s drain disturb in 2-transistor structure flash arrays

详细信息    查看全文

• 作者：Zhaozhao Xu^a ; ^b ; ^{Xuzhaozhao_816@163.com} ; Wensheng Qian^b ; Hualun Chen^b ; Wei Xiong^b ; Jun Hu^b ; Donghua Liu^b ; Wenting Duan^b ; Weiran Kong^b ; Wei Na^c ; Shichang Zou^a ; ^b
• 关键词：SONOS ; Drain disturb ; BTBT ; FNT ; Non-localized distribution ; Process optimization
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：44-51
• 全文大小：1867 K
• 卷排序：129

文摘

The program and erase distribution are confirmed. The drain disturb in 2-transistor structure flash array is investigated. Four process optimization ways for drain disturb are introduced. The reliability of the optimized cell is discussed.