A novel low turnoff loss carrier stored SOI LIGBT with trench gate barrier
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- 作者：Yitao He ; yitaohe@126.com" class="auth_mail" title="E-mail the corresponding author ; Ming Qiao ; Bo Zhang ; Zhaoji Li
- 关键词：Lateral insulated gate bipolar transistor (LIGBT) ; Carrier stored ; Trench gate barrier ; Turnoff loss ; Silicon-on-insulator (SOI)
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：89
- 期：Complete
- 页码：179-187
- 全文大小：1882 K
文摘
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We propose a novel carrier stored SOI LIGBT with trench gate barrier.
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Carrier stored effect can be realized due to the trench gate barrier.
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The effects of gate trench on on-state voltage drop and turnoff loss are discussed.
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The proposed SOI LIGBT can achieve 59% lower turnoff loss.
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