Oxygen plasma treatment of SiO_xC_y(− H) films polymerized by atmospheric pressure dielectric barrier discharge using hexamethylcyclrotrisiloxane

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• 作者：Yoon Kee Kim ; ^a ; ^{ykkim@hanbat.ac.kr"" rel=""nofollow} ; Gi Taek Kim^a
• 关键词：Silicon dioxide ; Plasma oxidation ; Plasma polymerization ; Atmospheric pressure ; Dielectric barrier discharge ; Hexamethylcyclotrisiloxane
• 刊名：Thin Solid Films
• 出版年：2011
• 出版时间：1 August 2011
• 年：2011
• 卷：519
• 期：20
• 页码：6750-6754
• 全文大小：821 K

文摘

The SiO₂-like layers were obtained by plasma-oxidation of the SiO_xC_y(− H) films deposited from hexamethylcyclotrisiloxane (HMCTSO) with helium and oxygen. The SiO₂-like layers were formed on as-deposited SiO_xC_y(− H) films within a second by oxidation using the He/O₂ atmospheric pressure dielectric barrier discharge (APDBD). The elemental ratio of oxygen to silicon in the layer was increased up to 1.95 which is closed to stoichiometry of SiO₂. The elemental composition and surface morphology were studied by means of x-ray photoelectron spectroscopy and atomic force microscopy. Wettability of the oxidized thin films was investigated by water droplet contact angle measurement. The contact angle of SiO_xC_y(− H) films are decreased from 63° to below 10° within a second by oxidation. Correlation between the elemental composition and the contact angle were discussed. The effects of oxidation duration and discharge generation voltage on the composition and surface morphology of the film were investigated.