Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length

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• 作者：Hanno Kü ; pers^a ; ^{kuepers@pdi-berlin.de} ; Faebian Bastiman^a ; Esperanza Luna^a ; Claudio Somaschini^a ; ^b ; Lutz Geelhaar^a
• 关键词：A1. Nanostructures ; A1. Crystal morphology ; A3. Molecular beam epitaxy ; B2. Semiconducting gallium arsenide
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：43-49
• 全文大小：1748 K
• 卷排序：459

文摘

Variation of the Ga flux leads to a decoupling of the formation of Ga droplets and the formation of NWs. NW length distribution of samples grown with the novel growth procedure is very homogeneous. Exploration of the nucleation of different crystalline objects. Analysis of the impact of the droplet size on the vertical yield of NWs.