A model of Cu₂O(111) “1  × baae14be2cd162a34">$\left[11\overline{2}\right]$ + 3 × $\left[1\overline{1}0\right]$” || Cu(100) “3 × [001] + 5 × [010]” with supercell parameters equal to 10.8 Å and 18.0 Å, was built for semicoherent Cu₂O/Cu interface.

The phenomenon “dislocation” column in Cu₂O combined with fluctuant interfacial O distribution indicate the poorly abrupt interface and unsmooth transition of electronic property.

The results show that the Cu substrate has a short-range effect to the Cu₂O due to transition from metallic (interface) to semiconduct (Second monolayer).