Tunable electronic behavior in 3d transition metal doped 2H-WSe₂

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• 作者：Shuai Liu^a ; Songlei Huang^a ; Hongping Li^a ; ^{hpli@mail.ujs.edu.cn} ; Quan Zhang^a ; Changsheng Li^a ; Xiaojuan Liu^b ; Jian Meng^b ; Yi Tian^c ; ^{tianyichem@gmail.com}
• 关键词：2H-WSe2 ; Metallic impurity ; First-principles calculations ; Electronic property
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：87
• 期：Complete
• 页码：295-300
• 全文大小：990 K
• 卷排序：87

文摘

The incorporation of 3d transition metal into 2H-WSe2 is thermodynamically more favorable under Se-rich condition. The electronic properties have been significantly tuned by the 3d transition metal. A pronounced metal transport behavior is realized in Sc and Ti-doped 2H-WSe2. Semiconducting nature with narrowed band gap is expected in Cr-doped 2H-WSe2. Semimetal and antiferromagnetic coupling is found in Mn-doped 2H-WSe2.