Study of total ionizing dose induced read bit errors in magneto-resistive random access memory

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• 作者：Haohao Zhang^a ; ^b ; Jinshun Bi^a ; ^b ; ^{bijinshun@ime.ac.cn} ; Haibin Wang^c ; Hongyang Hu^a ; ^b ; Jin Li^a ; ^b ; Lanlong Ji^a ; ^b ; Ming Liu^a ; ^b
• 关键词：MRAM ; Total ionizing dose effects ; Read bit errors ; SPICE model ; Radiation-harden
• 刊名：Microelectronics Reliability
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：67
• 期：Complete
• 页码：104-110
• 全文大小：858 K
• 卷排序：67

文摘

The read bit errors were observed in MRAM chips when the total ionizing dose (TID) reached a certain threshold value. Resistance drift of access transistor is proposed to unveil the physical mechanisms of these upset errors in MRAM. This drift model is simulated by HSPICE simulator and the results are consistent with experimental results.