Maximum applied voltage detector using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing

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• 作者：Mutsumi Kimura ; Takayuki Hasegawa ; Keisuke Ide ; Kenji Nomura ; Toshio Kamiya ; Hideo Hosono
• 关键词：Maximum applied voltage detector ; Amorphous In&ndash ; Ga&ndash ; Zn&ndash ; O (¦Á-IGZO) ; Thin-film transistor (TFT) ; Ozone annealing
• 刊名：Solid-State Electronics
• 出版年：2012
• 出版时间：September, 2012
• 年：2012
• 卷：75
• 期：Complete
• 页码：74-76
• 全文大小：737 K

文摘

We have developed a maximum applied voltage detector using an ¦Á-IGZO TFT exposed to ozone annealing. This TFT has an interesting property; the I_ds-V_gs characteristic shifts positively and becomes steep when gate voltage is applied, whereas it recovers the initial one with a small threshold voltage and a large subthreshold swing upon light illumination. Therefore, this TFT can be used as a maximum applied voltage detector; first, light is irradiated to initialize the I_ds-V_gs characteristic, next, changing external voltage is applied to the gate electrode, and finally, the maximum applied voltage is obtained from the final I_ds-V_gs characteristic.