A 19.38 dBm OIP3 gm-boosted up-conversion CMOS mixer for 5-6 GHz application
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- 作者：Wen-Hui Huang ; I-Yu Huang ; Yu-Shan Tseng ; Chia-Hsu Hsieh ; Chua-Chin Wang ; ccwang@ee.nsysu.edu.tw
- 关键词：Highly linear ; Up-conversion ; WLAN ; Current-reused and gm-boosting
- 刊名：Microelectronics Journal
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：60
- 期：Complete
- 页码：38-44
- 全文大小：1571 K
- 卷排序：60
文摘
A highly linear up-conversion mixer for 5–6 GHz wireless local area network (WLAN) applications implemented using TSMC 0.18-μm standard complementary metal oxide semiconductor (CMOS) technology is presented. The feature of the proposed mixer is based on the double-balanced Gilbert cell with current-reused technique to enhance the third-order input intercept point (IIP3). Moreover, local oscillator (LO) body grounded and gm-boosting techniques are also integrated to boost the power conversion gain (CG). The proposed up-conversion mixer demonstrates a maximum CG of 7.21 dB, a maximum IIP3 of 13.17 dBm, an output third-order input intercept point (OIP3) of 19.38 dBm, and a DC power consumption of 4 mW on silicon given a 1.1 V supply voltage. The overall chip area including radio frequency (RF) pads is 1×0.85 mm2, where the active area is merely 0.7×0.37 mm2.