Experimentation and simulation of tin oxide deposition on glass based on the SnCl₄ hydrolysis in an in-line atmospheric pressure chemical vapor deposition reactor

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• 作者：Jun-Woo Park ; Byung-Kuk Kim ; Hyoung June Kim ; Seungho Park
• 关键词：Tin oxide thin film deposition ; In-line APCVD reactor ; Rideal&ndash ; Eley mechanism ; Tin tetrachloride hydrolysis
• 刊名：Thin Solid Films
• 出版年：1 January, 2014
• 年：2014
• 卷：550
• 期：Complete
• 页码：114-120
• 全文大小：1350 K

文摘

Tin oxide thin films were deposited on glass substrates in an in-line atmospheric pressure chemical vapor deposition reactor under various conditions, which were numerically simulated using a commercial package. A soda-lime glass sheet was used as a deposition substrate, and SnCl₄ and H₂O in gas phase were separately supplied as the precursor and the oxidizer, respectively. By assuming that the main chemical reactions followed the Rideal-Eley mechanism, the experimentally determined deposition rates were fitted to obtain the reaction factors needed to describe the deposition process. The role of barrier gas injection for minimizing unwanted surface reaction or particle generation inside of the reactor, and not on the target (glass backplane itself) has been elucidated. Furthermore, the optimal operating conditions for the deposition on glass with the additives such as CH₃OH and HF have been investigated.