Analytical modeling to design the vertically aligned Si-nanowire metal-oxide-semiconductor photosensors for direct color sensing with high spectral resolution

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• 作者：Subhrajit Sikdar^a ; Basudev Nag Chowdhury^b ; Ajay Ghosh^c ; Sanatan Chattopadhyay^a ; ^{scelc@caluniv.ac.in}
• 关键词：Wavelength selective photodetector ; Nanowire MOS ; Photosensor ; Si-Nanowire ; Electron-photon interaction ; Photogeneration ; NEGF
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：87
• 期：Complete
• 页码：44-50
• 全文大小：838 K
• 卷排序：87

文摘

In the current work, an analytical model for the design of vertically aligned silicon (Si) nanowire metal-oxide-semiconductor (MOS) capacitor based multi-color photodetectors has been developed for the detection of entire visible spectrum with high spectral resolution. The photogeneration phenomena within the nanostructures are analyzed in detail by developing a quantum field model associated with second quantization electron-photon field operators. The non-equilibrium Green's function (NEGF) formalism is employed to solve the relevant equations. The study shows that the proposed device with specified design of diameter-voltage combinations is capable of detecting 64 spectral bands of the entire visible spectrum (380 nm to700 nm) directly with a very high resolution of 5 nm wavelength. Such direct sensing of each wavelength is observed to be independent of the fluctuations of illumination intensity. The device is designed to obtain a full-width-at-half-maximum (FWHM) smaller than the spectral resolution (5 nm) for each wavelength of the visible range, which indicates a very high quality digital imaging/sensing method. Such devices may be a potential alternative for the future nanoelectronics based photodevices for superior sensing/imaging applications.