Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

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• 作者：Jaehyun Cho^a ; ¹ ; Duy Phong Pham^b ; ¹ ; Junhee Jung^a ; Chonghoon Shin^a ; Jinjoo Park^b ; Sangho Kim^a ; Anh Huy Tuan Le^b ; Hyeongsik Park^b ; S.M. Iftiquar^b ; Junsin Yi^a ; ^b ; ^{yi@yurim.skku.ac.kr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：a-SiGe ; H thin film solar cells ; Hydrogenated microcrystalline silicon oxide ; p-type contact layer
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：41
• 期：Complete
• 页码：480-484
• 全文大小：681 K

文摘

In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiO_x:H), microcrystalline silicon (p-µc-Si:H), and microcrystalline silicon oxide (p-µc-SiO_x:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm² in the short-circuit current density (J_sc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (V_oc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact.