用户名: 密码: 验证码:
Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts
详细信息    查看全文
文摘
SiC nanowires were synthesized by LPCVI using different catalysts, and the influences of input gas ratio (α) and catalysts were investigated. The average diameter firstly decreased and then increased with increasing α. Under Ni-based catalysis, SiC nanowires were long and thin, and increased with increasing concentration; under Fe-based catalysis, they were short and thick, and the influence of concentration could be neglected. The growth of SiC nanowires was controlled by vapor-liquid-solid (VLS) growth mechanism and the liquid-solid interface between nanowire and metal droplet was the growth plane. At same concentration, the diameter grown under Ni-based catalyst decreased with decreasing diameter of catalyst droplet, while under Fe-based catalyst, the diameters were not affected by catalyst droplet because of the high concentration. SiC nanowires were synthesized in 2D C/SiC composites and could enhance the mechanical properties effectively because of energy consuming from the fracture, pulled up and debond of SiC nanowires.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700