Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot

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• 作者：Jifei Sun^a ; ^b ; Qiuxiang He^a ; Boyuan Ban^a ; Xiaolong Bai^a ; Jingwei Li^a ; Jian Chen^a ; ^{jchen@rntek.cas.cn}
• 关键词：A1. Minority carrier lifetime ; A1. Doping ; A1. Impurities ; A2. Directional solidification ; B2 Multi-crystalline Si
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：458
• 期：Complete
• 页码：66-71
• 全文大小：833 K
• 卷排序：458

文摘

A positive effect of Sn doping on MCL in Fe contaminated Si ingot can be confirmed. The strain field caused by Sn doping hinders the formation and diffusion of the Fei. Fe atoms induce a great constitutional supercooling. Sn atoms induce little constitutional supercooling comparing with that of Fe atoms. Trace amount of Fe or Sn doping has no significant difference in macrostructures.