Study of high-tech process furnace using inherently safer design strategies (IV). Advanced NAND device design and thin film process adjustment
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- 作者：Chih-Cheng Lua ; Kuo-Chi Changa ; Chun-Yu Chenb ; chency1617@gmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Inherently safer design (ISD) ; High-tech plant ; NAND flash ; Process design ; Process tools
- 刊名：Journal of Loss Prevention in the Process Industries
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：40
- 期：Complete
- 页码：378-395
- 全文大小：6121 K
文摘
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Proposed the ISD applications and verification for 22 NAND Flash design and high-tech process design.
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Established ISD substitution strategy for IC processes and tools design.
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Got the simulation result of NAND Flash Process Design using ISD strategies.
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Proposed the 22nmNAND Flash design specifications after ISD application.
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Implemented the 22nmNAND Flash process design simulation and experiment results.
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