Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces
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- 作者：F. Borgattia ; francesco.borgatti@cnr.it" class="auth_mail" title="E-mail the corresponding author ; P. Torellib ; G. Panaccioneb
- 关键词：X-ray photoelectron emission ; HAXPES ; XPS ; Transition metal oxides
- 刊名：Journal of Electron Spectroscopy and Related Phenomena
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：208
- 期：Complete
- 页码：95-99
- 全文大小：1027 K
文摘
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Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides.
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Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra.
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Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices.