Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors
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- 作者：Sung-Kyu Kwon ; Hyuk-Min Kwon ; Woon-Il Choi ; Hyeong-Sub Song ; Hi-Deok Lee ; 1 ; hdlee@cnu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：CMOS image sensor (CIS) ; Low frequency noise (LFN) ; Random telegraph signal (RTS) noise ; Source-follower (SF) ; Shallow trench isolation (STI)
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：119
- 期：Complete
- 页码：29-32
- 全文大小：813 K
文摘
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The effects of the STI induced damage on LFN of SF transistors were investigated.
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STI process induced damage on the STI edge could contribute to LFN characteristics.
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W STI shows grater RTS noise amplitude while RTS occurrences maintained lower.
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The enhanced multiple RTS event could screen the single event RTS effect in W STI.
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SF transistors without STI are promising candidates for low noise CIS applications.