Pulsed laser deposition of HfO₂ thin films on indium zinc oxide: Band offsets measurements

详细信息    查看全文

• 作者：D. Craciun ; V. Craciun ; ^{valentin.craciun@inflpr.ro}
• 关键词：HfO2 ; IZO ; HfO2/IZO heterostructure ; Band alignment ; X-ray photoelectron spectroscopy
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 April 2017
• 年：2017
• 卷：400
• 期：Complete
• 页码：77-80
• 全文大小：911 K
• 卷排序：400

文摘

High quality amorphous IZO and HfO2 films were obtained by PLD technique. XPS measurements were used to obtain the valence band alignment in HfO2/IZO heterostructure. A valence band offset (ΔEV) of 1.75 eV was obtained for the HfO2/IZO heterostructure. A conduction band offset (ΔEC) of 0.65 eV was estimated for the HfO2/IZO heterostructure.