Nanostructured SnS1−xTex thin films: Effect of Te concentration and physical properties
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- 作者：Hosein Kafashana ; Farid Jamali-Sheinib ; faridjamali2003@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; faridjamali@iauahvaz.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Reza Ebrahimi-Kahrizsangia ; Ramin Yousefic
- 关键词：SnS thin film ; Optical properties ; SnS1&minus ; xTex ; Electrodeposition ; Photoluminescence ; Solar cell
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：5 October 2016
- 年：2016
- 卷：681
- 期：Complete
- 页码：595-605
- 全文大小：3232 K
文摘
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SnS1−xTex thin films were prepared by electrodeposition method on FTO glass substrates.
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The XRD patterns obviously showed that the synthesized film was polycrystalline.
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The UV–Vis shows a variation in the optical band-gap energy of SnS1−xTex films from 1.28 to 1.44 eV.
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SnS1−xTex films would be suitable for the absorber layers in solar cells.
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The solar cell based on Te-doped SnS has higher conversion efficiency compared with SnS solar cell.