Unipolar resistive switching properties of amorphous Pr_0.7Ca_0.3MnO₃ films grown on a Pt/Ti/SiO₂/Si substrate

详细信息    查看全文

• 作者：Tae-Geun Seong^a ; ^d ; Beom-Seok Lee^a ; Kyu Bum Choi^a ; Sang-Hyo Kweon^b ; Beom Yong Kim^d ; Kyooho Jung^d ; Ji Won Moon^d ; Kee Jeong Lee^d ; Kwon Hong^d ; Sahn Nahm^a ; ^b ; ^c ; ^{snahm@korea.ac.kr" class="auth_mail}
• 关键词：PCMO ; ReRAM ; Resistive switching ; Thin film
• 刊名：Current Applied Physics
• 出版年：April, 2014
• 年：2014
• 卷：14
• 期：4
• 页码：538-542
• 全文大小：1367 K

文摘

Amorphous Pr_0.7Ca_0.3MnO₃ (APCMO) films were grown on a Pt/Ti/SiO₂/Si (Pt-Si) substrate at temperatures below 500聽掳C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.